Novel Capacitance Measurements in Copper Indium Gallium Diselenide Alloys: Final Subcontract Report, 1 July 1999--31 August 2003 | |
Johnson, D. C. | |
National Renewable Energy Laboratory (U.S.) | |
关键词: Alloys; Pv; Transients Pv; 36 Materials Science; Gallium Diselenide; | |
DOI : 10.2172/15007675 RP-ID : NREL/SR-520-35614 RP-ID : AC36-99-GO10337 RP-ID : 15007675 |
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美国|英语 | |
来源: UNT Digital Library | |
【 摘 要 】
This subcontract report describes the University of Oregon's objectives to measure the electronic properties of the copper indium/gallium diselenide alloys using several well-developed capacitance techniques appropriate for probing materials with a continuous distribution of semiconducting gap electronic energy states. We applied a new synthetic method to the production of CIGS alloys, namely, the modulated elemental reactant method. To form CIGS by this method, alternating layers of Cu:In:Se and Cu:Ga:Se composites, each less than 100 thick, were evaporated in sequence and then annealed at low temperature. A second focus was to test and develop junction capacitance methods to better understand the electronic properties in CIGS material and establish a relationship of those properties to specific device performance parameters. The primary methods employed were transient photocapacitance (TPC) spectroscopy and drive-level capacitance profiling (DLCP). Finally, we extended our characterization studies to four CuIn1-xAlxSe2 (CIAS) samples, also supplied by IEC. Our photocapacitance and DLCP measurements on these CIAS samples indicated that for a sample with 13 at.% Al (having a bandgap of nearly 1.2 eV), the electronic properties were essentially identical to those in CIGS samples with 26 at.% Ga.
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