Characterization of failure modes in deep UV and deep green LEDs utilizing advanced semiconductor localization techniques.

Tangyunyong, Paiboon ; Miller, Mary A. ; Cole, Edward Isaac, Jr.

Sandia National Laboratories

关键词: Alloys;    Wavelengths;    Monitors;    36 Materials Science;    Light Emitting Diodes;   

DOI  :  10.2172/1038197
RP-ID  :  SAND2012-1853
RP-ID  :  AC04-94AL85000
RP-ID  :  1038197

美国|英语

来源: UNT Digital Library

【 摘 要 】

We present the results of a two-year early career LDRD that focused on defect localization in deep green and deep ultraviolet (UV) light-emitting diodes (LEDs). We describe the laser-based techniques (TIVA/LIVA) used to localize the defects and interpret data acquired. We also describe a defect screening method based on a quick electrical measurement to determine whether defects should be present in the LEDs. We then describe the stress conditions that caused the devices to fail and how the TIVA/LIVA techniques were used to monitor the defect signals as the devices degraded and failed. We also describe the correlation between the initial defects and final degraded or failed state of the devices. Finally we show characterization results of the devices in the failed conditions and present preliminary theories as to why the devices failed for both the InGaN (green) and AlGaN (UV) LEDs.