Electrical Characterization of Printed Nanocrystalline Silicon Films, Cooperative Research and Development Final Report, CRADA Number CRD-07-00241

Young, D.

National Renewable Energy Laboratory (U.S.)

关键词: 14 Solar Energy;    Silicon Crada;    36 Materials Science;    Microscopy;    Commercialization And Technology Transfer;   

DOI  :  10.2172/1013908
RP-ID  :  NREL/TP-7A10-50944
RP-ID  :  AC36-08GO28308
RP-ID  :  1013908

美国|英语

来源: UNT Digital Library

【 摘 要 】

This CRADA helped Innovalight characterize and quantify their ink-based selective emitter technology. Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology was demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy revealed; abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces was also verified using scanning electron microscopy dopant contrast imaging.