We present a novel scheme for performing a conditional phase gate between two spin qubits in adjacent semiconductor quantum dots through delocalized single electron states, formed through the inter-dot Forster interaction. We consider two resonant quantum dots, each containing a single excess conduction band electron, whose spin embodies the qubit. We demonstrate that both the two-qubit gate, and arbitrary single-qubit rotations, may be realized to a high fidelity with current semiconductor and laser technology. Notes: A. Nazir, B.W. Lovett and G.A.D. Briggs, Department of Materials, Oxford University, Oxford OX1 3PH 5 Pages