Nanoporous films for epitaxial growth of single crystal semiconductor materials : final LDRD report.

Rowen, Adam M. ; Koleske, Daniel David ; Fan, Hongyou ; Brinker, C. Jeffrey ; Burckel, David Bruce ; Williams, John Dalton ; Arrington, Christian L. ; Steen, William Arthur

关键词: ASPECT RATIO;    CARBON;    CRYSTAL GROWTH;    DEFECTS;    DEPOSITION;    MONOCRYSTALS;    SEMICONDUCTOR MATERIALS;    SILICA;    VIABILITY Crystal growth;    Porous materials.;    Electrochemical analysis.;   

DOI  :  10.2172/966925
RP-ID  :  SAND2007-6409
PID  :  OSTI ID: 966925
Others  :  TRN: US200923%%81

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

This senior council Tier 1 LDRD was focused on exploring the use of porous growth masks as a method for defect reduction during heteroepitaxial crystal growth. Initially our goal was to investigate porous silica as a growth mask, however, we expanded the scope of the research to include several other porous growth masks on various size scales, including mesoporous carbon, photolithographically patterned SU-8 and carbonized SU-8 structures. Use of photolithographically defined growth templates represents a new direction, unique in the extensive literature of patterned epitaxial growth, and presents the possibility of providing a single step growth mask. Additional research included investigation of pore viability via electrochemical deposition into high aspect ratio photoresist. This project was a small footprint research effort which, nonetheless, produced significant progress towards both the stated goal as well as unanticipated research directions.