Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008

Tan, T. Y. ; Li, N.

关键词: ALLOYS;    ANNEALING;    ATOMS;    DIFFUSION;    DISSOLUTION;    EUTECTICS;    GETTERING;    GETTERS;    PROCESSING;    RADIATIONS;    SILICON;    SIMULATION;    SOLUBILITY;    VACANCIES PV;    OPTICAL PROCESSING;    GETTERING;    MULTICRYSTALLINE SILICON VACANCY INJECTION;    RADIATION-ENHANCED SOLUBILITY;    RADIATION-ENHANCED DIFFUSION;    METAL IMPURITY ATOMS;    PRECIPITATE DISSOLUTION;    Solar Energy - Photovoltaics;   

DOI  :  10.2172/939277
RP-ID  :  NREL/SR-520-44088
PID  :  OSTI ID: 939277
Others  :  Other: XEJ-6-66132-01
Others  :  TRN: US200823%%351

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来源: SciTech Connect

【 摘 要 】

This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.