Material compatibility and thermal aging of thermoelectric materials.

Gardea, Andrew D. ; Nishimoto, Ryan ; Yang, Nancy Y. C. ; Morales, Alfredo Martin ; Whalen, Scott A. ; Chames, Jeffrey M. ; Clift, W. Miles

关键词: AGING;    ALLOYS;    ANNEALING;    COMPATIBILITY;    DESIGN;    DIFFUSION;    DIFFUSION BARRIERS;    EVAPORATION;    HARDNESS;    INSTABILITY;    MICROSTRUCTURE;    RELIABILITY;    STABILITY;    STOICHIOMETRY;    TEXTURE;    THERMOELECTRIC MATERIALS Thermoelectric materials.;    Materials-Thermal properties.;   

DOI  :  10.2172/986608
RP-ID  :  SAND2009-5968
PID  :  OSTI ID: 986608
Others  :  TRN: US201018%%348

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

In order to design a thermoelectric (TE) module suitable for long-term elevated temperature use, the Department 8651 has conducted parametric experiments to study material compatibility and thermal aging of TE materials. In addition, a comprehensive material characterization has been preformed to examine thermal stability of P- and N-based alloys and their interaction with interconnect diffusion barrier(s) and solder. At present, we have completed the 7-days aging experiments for 36 tiles, from ambient to 250 C. The thermal behavior of P- and N-based alloys and their thermal interaction with both Ni and Co diffusion barriers and Au-Sn solder were examined. The preliminary results show the microstructure, texture, alloy composition, and hardness of P-(Bi,Sb){sub 2}Te{sub 3} and N-Bi{sub 2}(Te,Se){sub 3} alloys are thermally stable up to 7 days annealing at 250 C. However, metallurgical reactions between the Ni-phosphor barriers and P-type base alloy were evident at temperatures {ge} 175 C. At 250 C, the depth (or distance) of the metallurgical reaction and/or Ni diffusion into P-(Bi,Sb){sub 2}Te{sub 3} is approximately 10-15 {micro}m. This thermal instability makes the Ni-phosphor barrier unsuitable for use at temperatures {ge} 175 C. The Co barrier appeared to be thermally stable and compatible with P(Bi,Sb){sub 2}Te{sub 3} at all annealing temperatures, with the exception of a minor Co diffusion into Au-Sn solder at {ge} 175 C. The effects of Co diffusion on long-term system reliability and/or the thermal stability of the Co barrier are yet to be determined. Te evaporation and its subsequent reaction with Au-Sn solder and Ni and Co barriers on the ends of the tiles at temperatures {ge} 175 C were evident. The Te loss and its effect on the long-term required stoichiometry of P-(Bi, Sb){sub 2}Te{sub 3} are yet to be understood. The aging experiments of 90 days and 180 days are ongoing and scheduled to be completed in 30 days and 150 days, respectively. Material characterization activities are continuing for the remaining tiles.