Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

Atwater, H. A.

关键词: BONDING;    EFFICIENCY;    PERFORMANCE;    SIMULATION;    SOLAR CELLS;    TARGETS PV;    TWO-JUNCTION DEVICES;    TOP CELLS;    HIGH QUALITY;    INGAP/GAAS;    BOTTOM CELLS;    DIRECT BOND;    TANDEM;    SOLAR CELLS;    DEVICE;    PERFORMANCE;    INGAAS/INP;    MODELING;    Solar Energy - Photovoltaics;   

DOI  :  10.2172/944501
RP-ID  :  NREL/SR-520-44532
PID  :  OSTI ID: 944501
Others  :  Other: XAT-4-33624-10
Others  :  TRN: US200902%%908

学科分类：再生能源与代替技术

美国|英语

来源: SciTech Connect

【 摘 要 】

We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.