Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

Yelundur, V. ; Hegedus, S. ; Rohatgi, A. ; Birkmire, R.

关键词: CRYSTALLIZATION;    DEHYDROGENATION;    DEPOSITION;    ELECTRON BEAMS;    ENERGY CONVERSION;    EVAPORATION;    FABRICATION;    GETTERING;    GLASS;    GRAIN SIZE;    HYDROGEN;    LIFETIME;    ORGANIC COMPOUNDS;    PASSIVATION;    SILICON;    SOLAR CELLS;    SUBSTRATES;    THIN FILMS;    VOLATILE MATTER;    X-RAY DIFFRACTION PV;    THIN FILM SILICON;    TANDEM DEVICE;    BOTTOM CELL;    HIGH-EFFICIENCY;    SOLAR CELLS;    HOT-WIRE CHEMICAL VAPOR DEPOSITION;    SHORT-CIRCUIT CURRENT;    DEVICE FABRICATION;    Solar Energy - Photovoltaics;   

DOI  :  10.2172/942088
RP-ID  :  NREL/SR-520-44380
PID  :  OSTI ID: 942088
Others  :  Other: XAT-4-33624-05
Others  :  TRN: US200902%%91

美国|英语

来源: SciTech Connect

【 摘 要 】

GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.