Nanoengineering for solid-state lighting.

Schubert, E. Fred (Rensselaer Polytechnic Institute,Troy, NY) ; Koleske, Daniel David ; Wetzel, Christian (Rensselaer Polytechnic Institute,Troy, NY) ; Lee, Stephen Roger ; Missert, Nancy A. ; Lin, Shawn-Yu (Rensselaer Polytechnic Institute,Troy, NY) ; Crawford

关键词: DEFECTS;    DIELECTRIC MATERIALS;    EFFICIENCY;    QUANTUM EFFICIENCY Light emitting diodes.;    Solid state lighting;    Nanoelectronics.;   

DOI  :  10.2172/973851
RP-ID  :  SAND2009-6130
PID  :  OSTI ID: 973851
Others  :  TRN: US201007%%288

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

This report summarizes results from a 3-year Laboratory Directed Research and Development project performed in collaboration with researchers at Rensselaer Polytechnic Institute. Our collaborative effort was supported by Sandia's National Institute for Nanoengineering and focused on the study and application of nanoscience and nanoengineering concepts to improve the efficiency of semiconductor light-emitting diodes for solid-state lighting applications. The project explored LED efficiency advances with two primary thrusts: (1) the study of nanoscale InGaN materials properties, particularly nanoscale crystalline defects, and their impact on internal quantum efficiency, and (2) nanoscale engineering of dielectric and metal materials and integration with LED heterostructures for enhanced light extraction efficiency.