Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

Ahsan, M. ; Bolton, T. ; Carnes, K. ; /Kansas State U. ; Demarteau, M. ; /Fermilab ; Demina, R. ; /Rochester U. ; Gray, T. ; /Kansas State U. ; Korjenevski, S. ; /Rochester U. ; Lehner, F. ; /Zurich U. ; Lipton, R. ; Mao, H.S. ; /Fermilab ; McCarthy, R. ; /SUNY, Stony Broo

关键词: CALIBRATION;    HYPOTHESIS;    IRRADIATION;    LEAKAGE CURRENT;    PROTONS;    RADIATIONS;    SILICON Accelerators;   

DOI  :  10.2172/975162
RP-ID  :  FERMILAB-TM-2455-E
PID  :  OSTI ID: 975162
Others  :  TRN: US1002819

学科分类：核物理和高能物理

美国|英语

来源: SciTech Connect

【 摘 要 】

We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.