A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report

Cao, Lei¹  Miller, Don¹ 

[1] The Ohio State Univ., Columbus, OH (United States)

关键词: FAST NEUTRONS;    GALLIUM NITRIDES;    TEMPERATURE RANGE 0400-1000 K;    NEUTRON BEAMS;    LEAKAGE CURRENT;    SENSORS;    CHARGE COLLECTION;    NEUTRON FLUENCE;    EFFICIENCY;    EVALUATION;    IRRADIATION;    PERFORMANCE;    IN CORE INSTRUMENTS;    NEUTRON DETECTORS;    ELECTRIC CONDUCTIVITY;    HEAT RESISTANT MATERIALS;   

DOI  :  10.2172/1169925
RP-ID  :  DOE/NEUP--11-3004
PID  :  OSTI ID: 1169925
Others  :  Other: 11-3004
Others  :  TRN: US1500398

美国|英语

来源: SciTech Connect

【 摘 要 】

The objectives of this project are to develop a small and reliable gallium nitride (GaN) neutron sensor that is capable of withstanding high neutron fluence and high temperature, isolating gamma background, and operating in a wide dynamic range. The first objective will be the understanding of the fundamental materials properties and electronic response of a GaN semiconductor materials and device in an environment of high temperature and intense neutron field. To achieve such goal, an in-situ study of electronic properties of GaN device such as I-V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam will be designed and implemented. We will also perform in-core irradiation of GaN up to the highest yet fast neutron fluence and an off-line performance evaluation.