Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

Bernevig, B.Andrei ; Zhang, Shou-Cheng ; /Stanford U., Phys. Dept.

关键词: GALLIUM ARSENIDES;    SPIN;    HALL EFFECT;    L-S COUPLING;    DOPED MATERIALS Other;    MATSCI;   

DOI  :  10.2172/970443
RP-ID  :  SLAC-PUB-13909
PID  :  OSTI ID: 970443
Others  :  TRN: US201003%%153

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.