Experimental Observation of the Inverse Spin Hall Effect at Room Temperature

Liu, Baoli ; Shi, Junren ; Wang, Wenxin ; Zhao, Hongming ; Li, Dafang ; /Beijing, Inst. Phys. ; Zhang, Shoucheng ; /Stanford U., Phys. Dept. ; Xue, Qikun ; Chen, Dongmin ; /Beijing, Inst. Phys.

关键词: ELECTRIC CURRENTS;    ELECTRON GAS;    HALL EFFECT;    ONSAGER RELATIONS;    POLARIZATION;    QUANTUM WELLS;    SPIN;    AMBIENT TEMPERATURE;    ALUMINIUM;    GALLIUM ARSENIDES;    INDIUM ARSENIDES Other;    MATSCI;   

DOI  :  10.2172/973794
RP-ID  :  SLAC-PUB-13918
PID  :  OSTI ID: 973794
Others  :  TRN: US201007%%382

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

We observe the inverse spin Hall effect in a two-dimensional electron gas confined in Al-GaAs/InGaAs quantum wells. Specifically, they find that an inhomogeneous spin density induced by the optical injection gives rise to an electric current transverse to both the spin polarization and its gradient. The spin Hall conductivity can be inferred from such a measurement through the Einstein relation and the onsager relation, and is found to have the order of magnitude of 0.5(e{sup 2}/h). The observation is made at the room temperature and in samples with macroscopic sizes, suggesting that the inverse spin Hall effects is a robust macroscopic transport phenomenon.