GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's

Sandra Schujman ; Leo Schowalter

关键词: ALUMINIUM;    DEFECTS;    DISLOCATIONS;    EFFICIENCY;    GALLIUM NITRIDES;    LIFETIME;    LIGHT EMITTING DIODES;    NITRIDES;    PERFORMANCE;    PHOTONS;    SAPPHIRE;    SUBSTRATES;    WAVELENGTHS;   

DOI  :  10.2172/1014019
RP-ID  :  None
PID  :  OSTI ID: 1014019
Others  :  TRN: US1102692

学科分类：物理（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

The objective of this project was to develop and then demonstrate the efficacy of a costeffective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this ???GaN-ready??? substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded AlxGa1-xN layers on top. Pseudomorphic AlxGa1-xN epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 108 cm-2 while the pseudomorphic LEDs have TDD ??�� 105 cm-2. The resulting TDD, when grading the AlxGa1-xN layer all the way to pure GaN to produce a ???GaN-ready??? substrate, has varied between the mid 108 down to the 106 cm-2. These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.