BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

N. Badi ; D. Starikov ; C. Boney ; A. Bensaoula ; D. Johnstone

关键词: BORON;    BORON NITRIDES;    CAPACITORS;    DEPOSITION;    PHYSICAL VAPOR DEPOSITION;    THIN FILMS Boron Nitride;    Boron oxynitride;    Capacitors;    High Temperature Capacitors;    Energy Storage;    High temperature Electronics;    High Energy Density Capacitors;   

DOI  :  10.2172/1012989
RP-ID  :  DOE/05ER84325-Final Report
PID  :  OSTI ID: 1012989
Others  :  TRN: US201111%%397

学科分类：能源（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.