Development of Spintronic Bandgap Materials

Levy, Jeremy ; Awschalom, David ; Floro, Jerrold

关键词: Quantum Dots;    Spintronics;   

DOI  :  10.2172/1120126
RP-ID  :  DOE-UP-46421
PID  :  OSTI ID: 1120126

学科分类：凝聚态物理

美国|英语

来源: SciTech Connect

【 摘 要 】

The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for ???spintronics bandgap materials???. Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically gated structures were created on systems with up to six well-defined quantum dots with a controlled geometric arrangement, and low-temperature (mK) transport experiments were performed. These experiments showed evidence for a crossover from diamagnetic to Zeeman energy shifts in resonant tunneling of electrons through electronic states in the quantum dots.