科技报告详细信息
Low-Defect Heteroepitaxy on Porous Si Substrates: Cooperative Research and Development Final Report
Lee, Benjamin1 
[1] National Renewable Energy Lab. (NREL), Golden, CO (United States)
关键词: CRADA;    epitaxial;    III-V layers;   
DOI  :  10.2172/1167062
RP-ID  :  NREL/TP--5J00-63409
PID  :  OSTI ID: 1167062
美国|英语
来源: SciTech Connect
PDF
【 摘 要 】

In this collaboration, NREL will grow Ge, SiGe, and III-V layers on porous Si (pSi) substrates prepared either by Crystal Solar or at NREL. The intent is to grow low-defect epitaxial III-V alloys using the porous Si layer to prevent defect formation. Finally, we aim to fabricate solar cells from the III-V layers to prove the electronic quality.

【 预 览 】
附件列表
Files Size Format View
227KB PDF download
  文献评价指标  
  下载次数:6次 浏览次数:20次