Low-Defect Heteroepitaxy on Porous Si Substrates: Cooperative Research and Development Final Report

Lee, Benjamin¹ 

[1] National Renewable Energy Lab. (NREL), Golden, CO (United States)

关键词: CRADA;    epitaxial;    III-V layers;   

DOI  :  10.2172/1167062
RP-ID  :  NREL/TP--5J00-63409
PID  :  OSTI ID: 1167062

美国|英语

来源: SciTech Connect

【 摘 要 】

In this collaboration, NREL will grow Ge, SiGe, and III-V layers on porous Si (pSi) substrates prepared either by Crystal Solar or at NREL. The intent is to grow low-defect epitaxial III-V alloys using the porous Si layer to prevent defect formation. Finally, we aim to fabricate solar cells from the III-V layers to prove the electronic quality.