Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Materials

Y. H. Lin¹  C. K. Cheng²  K. H. Chen¹  C. H. Fu¹  T. W. Chang²  C. H. Hsu³  J. Kwo⁴  M. Hong¹ 

[1] Department of Physics, National Taiwan University, Taipei 10617, Taiwan;Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan;;National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan;Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

关键词: atomic layer deposition;    single crystal;    epitaxial;    molecular beam epitaxy;    (001) and (111) orientations;    interfacial trap density;   

DOI  :  10.3390/ma8105364

来源: mdpi

【 摘 要 】

Single-crystal atomic-layer-deposited (ALD) Y₂O₃ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 × 6 and GaAs(111)A-2 × 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001), the Y₂O₃ films are of a cubic phase and have (110) as the film normal, with the orientation relationship being determined: Y₂O₃ cm⁻²eV⁻¹ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D_it are the lowest ever achieved among all the ALD-oxides on GaAs(001).

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.