Synthesis and characterization of new quaternary MoBiInSe5 mixed metal chalcogenide thin films

JOURNAL OF ALLOYS AND COMPOUNDS

卷:491

Article

Mane, R. M.¹  Mane, S. R.¹  Kharade, R. R.¹  Bhosale, P. N.¹ 

[1] Shivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, India

关键词: Thin film;    APT;    X-ray diffraction;    SEM;    EDAX;    TEP;   

DOI  :  10.1016/j.jallcom.2009.10.159

来源: Elsevier

【 摘 要 】

Uniform mixed quaternary metal chalcogenide thin films of MoBiInSe5 have been successfully deposited on microglass slides substrate support using simple arrested precipitation technique (APT). The precursors used were molybdenum, bismuth, indium, triethanolamine in complex form and sodium selenosulphite as a source of Mo4+, Bi3+, In3+ and Se2- along with organic additives, respectively. The compositional analysis and morphology of the as deposited thin films were studied using energy dispersive X-ray analysis (EDAX), X-ray diffraction (XRD) and scanning electron microscope (SEM). The effect of preparative parameters such as concentration of precursors, complexing agent, P-H, temperature, rate of agitation on morphology of the as deposited thin films was studied. The chemical composition was found to be stoichiometric. Morphological studies show that, refinement of grain size was strongly influenced by preparative parameters. In the present investigation we have described growth kinetics of MoBiInSe5 chalcogenide thin films using arrested precipitation technique (APT). The compositional and morphological results of as deposited MoBiInSe5 thin films showed the possibility of this material as best candidate for broadband photo convertor. DC electrical conductivity and TEP study shows that the material is n-type semiconductor. (c) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

Free