Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition

JOURNAL OF ALLOYS AND COMPOUNDS

卷:617

Article

Singh, S. D.¹  Ajimsha, R. S.¹  Mukherjee, C.¹  Kumar, Ravi¹  Kukreja, L. M.¹  Ganguli, Tapas¹ 

[1] Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India

关键词: Epitaxy;    Pulsed laser deposition;    X-ray diffraction;    Wide band gap semiconductors;   

DOI  :  10.1016/j.jallcom.2014.08.042

来源: Elsevier

【 摘 要 】

Epitaxy of ZnO layers on cubic GaP(1 1 1) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi (phi) scans in high resolution X-ray diffraction measurements are (0 0 0 1)(Zno) parallel to (1 1 1)(GaP) and <-12 - 10 >(Zno) parallel to <-1 1 0 >(GaP) respectively. Our results of epitaxy of ZnO and its intense excitonic photoluminescence with very weak defect luminescence suggest that (1 1 1) oriented GaP can be a potential buffer layer choice for the integration of ZnO based optoelectronic devices on Si(1 1 1) substrates. (C) 2014 Elsevier B.V. All rights reserved.

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