Copper-silicon dioxide nanocomposites: Structure and electron transport

JOURNAL OF ALLOYS AND COMPOUNDS

卷:726

Article

Svito, Ivan A.¹  Korolik, Olga V.¹  Mazanik, Alexander V.¹  Fedotov, Alexander K.¹  Saad, Anis M.²  Luhin, Valery G.³  Koltunowicz, Tomasz N.⁴  Zukowski, Pawel⁴ 

[1] Belarusian State Univ, 4 Nezalezhnastsi Av, Minsk 220030, BELARUS

[2] Al Balqa Appl Univ, Phys Dept, POB 4545, Amman 11953, Jordan

[3] Belarusian State Technol Univ, Ctr Phys & Chem Invest Methods, 13A Sverdlova Str, Minsk, BELARUS

[4] Lublin Univ Technol, 38D Nadbystrzycka Str, PL-20618 Lublin, Poland

关键词: Nanocomposite;    Copper;    Silicon dioxide;    Defects;    Permittivity;    Electron transport;   

DOI  :  10.1016/j.jallcom.2017.07.310

来源: Elsevier

【 摘 要 】

We investigated correlation between structure and electron transport properties of composite films synthesized by the ion-beam sputtering of Cu + SiO2 target. Photoluminescence (PL) spectra testify to an oxygen deficiency in the silicon dioxide matrix in agreement with the Raman spectroscopy, which reveals the presence of CU2O phase along with elemental copper. For the nanocomposites with copper atomic fraction x < 0.64, the temperature dependence of conductivity obeys ln(sigma) similar to T(-0.5 )law at low temperatures (electron tunneling between size distributed copper nanoparticles) replacing with the Mott Variable Range Hopping (VRH) with the temperature increase. Electron transport properties of the studied nanocomposites are significantly affected by matrix defectiveness, which increases with metallic phase content according to PL study. The increasing matrix defectiveness results in decrease of crossover temperature from tunneling to VRH conductivity, as well as growth of matrix permittivity due to an enhanced contribution of electrons localized at defects. (C) 2017 Elsevier B.V. All rights reserved.

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