Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

JOURNAL OF ALLOYS AND COMPOUNDS

卷:804

Article

Kalbarczyk, Karolina¹  Dybko, Krzysztof^1,2  Gas, Katarzyna^1,3  Sztenkiel, Dariusz¹  Foltyn, Marek¹  Majewicz, Magdalena¹  Nowicki, Piotr¹  Lusakowska, ElZbieta¹  Hommel, Detlef^3,4  Sawicki, Maciej¹ 

[1] Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Polish Acad Sci, Int Res Ctr MagTop, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland

[3] Univ Wroclaw, Inst Expt Phys, Pl Maxa Borna 9, PL-50204 Wroclaw, Poland

[4] Polish Ctr Technol Dev, Ul Stablowicka 147, PL-54066 Wroclaw, Poland

关键词: (Ga,Mn)N;    Schottky junction;    Schottky barrier height;    Dilute magnetic semiconductors;    GaN;    Vertical structures;   

DOI  :  10.1016/j.jallcom.2019.07.026

来源: Elsevier

【 摘 要 】

Schottky barrier height and the ideality factor eta are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10 M Omega resistances already at room temperature are indicative that a nearly conductive-dislocation-free electrical properties are achieved. The analysis of temperature dependence of the forward bias I-V characteristics in the frame of the thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to be slightly lower but close in character to other metal/GaN junctions. However, the large magnitudes of the ideality factor eta > 1.5 for T <= 300 K, point to a sizable current blocking in the structure. While it remains to be seen whether it is due to the presence of (Ga,Mn)N barrier or due to other factors which reduce the effective area of the junction, an existence of a substantial serial resistance may hold the key to explain similar observations in other devices of a corresponding structure and technological relevance. (C) 2019 Elsevier B.V. All rights reserved.

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