Charge trapping properties of Ge nanocrystals grown via solid-state dewetting

JOURNAL OF ALLOYS AND COMPOUNDS

卷:756

Article

Jadli, I.¹  Aouassa, M.¹  Johnston, S.²  Maaref, H.¹  Favre, L.³  Ronda, A.³  Berbezier, I.³  M'ghaieth, R.¹ 

[1] Monastir Univ, Fac Sci, Dept Phys, Lab Microopto Elect & Nanostruct LMON, Monastir 5019, Tunisia

[2] Natl Renewable Energy Lab, 15013 Denver West Pkwy, Golden, CO USA

[3] Aix Marseille Univ, CNRS 6137, Inst Mat Microelect Nanosci Provence, Campus St Jerome, F-13397 Marseille 20, France

关键词: Ge NCs;    Dewetting;    Nonvolatile memory;   

DOI  :  10.1016/j.jallcom.2018.05.022

来源: Elsevier

【 摘 要 】

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affects the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (V-FB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs. (C) 2018 Elsevier B.V. All rights reserved.

【 授权许可】

Free