Enhancing the adhesion of diamond films on cobalt-cemented tungsten carbide substrate using tungsten particles via MPCVD system

JOURNAL OF ALLOYS AND COMPOUNDS

卷:509

Article

Lai, Wen Chi²  Wu, Yu-Shiang¹  Chang, Hou-Cheng³  Lee, Yuan-Haun² 

[1] Univ Sci & Technol China, Dept Mech Engn, Taipei 11581, Taiwan

[2] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

[3] Univ Sci & Technol China, Dept Elect Engn, Taipei 11581, Taiwan

关键词: Tungsten particle;    Cobalt-cemented tungsten carbide;    Adhesion;    Gap;    Diamond film;   

DOI  :  10.1016/j.jallcom.2011.01.149

来源: Elsevier

【 摘 要 】

To increase increase the adhesion of diamond films and avoid the negative effects of using cobalt, previous treatments have employed tungsten particles to cover the surface of the 6 wt.% cobalt-cemented tungsten carbide (WC-Co) substrate. The surface of the tungsten particles is transformed into W2C and WC, which attracts and traps carbon. Through the process of nucleation, the carbon forms around the tungsten particles, thereby satisfying the conditions necessary for the formation of diamond film. Using Raman spectroscopy, we determined that diamond films of good quality with excellent adhesive properties and a hardness level as high as 27.78 GPa could be produced following pretreatment with 2.01 mu m tungsten particles. Rockwell indentation tests indicate that addition of tungsten particles promotes the interfacial adhesion of diamond films with WC-Co substrates. We determined that using smaller tungsten particles decreased the number of gaps and cavities on the surface of the substrate, thereby enhancing the adhesion of the diamond film. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

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