The LaPdIn4 indide and elementary properties of the LaTIn4 (T = Ni, Pd, Pt) materials family

JOURNAL OF ALLOYS AND COMPOUNDS

卷:694

Article

Carnicom, E. M.¹  Xie, W. W.^1,3  Seibel, E. M.¹  Klimczuk, T.²  Cava, R. J.¹ 

[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

[2] Gdansk Univ Technol, Dept Phys, PL-80233 Gdansk, Poland

[3] Louisiana State Univ, Dept Chem, Baton Rouge, LA 70803 USA

关键词: Crystal structure;    Lanthanum;    Indium-rich intermetallics;    Resistivity;    Magnetization;    Quantum oscillations;   

DOI  :  10.1016/j.jallcom.2016.10.047

来源: Elsevier

【 摘 要 】

The indium-rich intermetallic compound LaPdIn4 is reported, prepared by arc-melting and annealing at 600 degrees C. Single crystal X-ray diffraction found the material to be orthorhombic, space group Cmcm (No. 63), with lattice parameters a = 4.5462(3) angstrom, b = 16.9208(10) angstrom, and c = 7.3100(5) angstrom. This previously unreported indide is isostructural with LaNiIn4 and LaPtIn4. It is demonstrated that all three compounds in the LaTIn4 (T = Ni, Pd, Pt) family display metallic behavior with resistivity values between 20 and 30 mu ohm-cm at 250 K. In addition, temperature and field-dependent magnetization measurements between 2 and 250 K show all to be weak paramagnets or diamagnets, with very small amounts of spin-bearing impurities present. The field-dependent magnetization showed evidence of de Haas-van Alphen quantum oscillations in the Pd and Pt containing compounds near applied fields of 5 T. (C) 2016 Elsevier B.V. All rights reserved.

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