期刊论文详细信息
JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS 卷:242
Solutions for a hydrodynamic model of semiconductors
Article
Li, DN ; Qian, SX
关键词: semiconductor;    hydrodynamic;    initial boundary value problem;   
DOI  :  10.1006/jmaa.1999.6653
来源: Elsevier
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【 摘 要 】

We study a three-dimensional isothermal hydrodynamic model of semiconductors and prove the existence of local solutions to the initial boundary value problem corresponding to an insulated boundary. (C) 2000 Academic Press.

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