In situ Observation of Microstructure Evolution in 4H-SiC under 3.5 keV He+ Irradiation

JOURNAL OF NUCLEAR MATERIALS

卷:471

Article

Shen, Qiang^1,2  Ran, Guang¹  Hinks, Jonathan²  Donnelly, Stephen E.²  Wang, Lumin¹  Li, Ning¹ 

[1] Xiamen Univ, Coll Energy, Xiamen 361102, Fujian, Peoples R China

[2] Univ Huddersfield, Sch Comp & Engn, Huddersfield HD1 3DH, W Yorkshire, England

关键词: SiC;    In situ TEM;    In situ irradiation;    Bubble disc;    Microstructure;   

DOI  :  10.1016/j.jnucmat.2016.01.017

来源: Elsevier

【 摘 要 】

4H-SiC was irradiated with 3.5 keV He+ ions using the MIAMI facility at University of Huddersfield. The evolution of microstructure and gas bubbles during the irradiation at 700 degrees C, 800 degrees C and 900 degrees C was observed by in situ transmission electron microscopy. Under irradiation, isolated bubbles and bubble discs formed in the SiC matrix. Bubble discs lying on {0001} and{10-10} crystal planes were beginning to form at ion fluence above 2.3 x 10(20) He+/m(2) at 700 degrees C. The density of bubble discs increased with increasing irradiation fluence. However, growth rates were different at different of the implantation periods and temperature holding periods. The nucleation and growth of the bubble discs were attributed to be coalescence of the adjacent He vacancies and combination of loop punching and trap mutation, respectively. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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