Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:323

Article

Kugler, Zoe¹  Drewello, Volker¹  Schaefers, Markus¹  Schmalhorst, Jan¹  Reiss, Guenter¹  Thomas, Andy¹ 

[1] Univ Bielefeld, Dept Phys, D-33615 Bielefeld, Germany

关键词: Perpendicular anisotropy;    Magnetic tunnel junction;    Spinelectronic;   

DOI  :  10.1016/j.jmmm.2010.08.038

来源: Elsevier

【 摘 要 】

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions(MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy. (C) 2010 Elsevier B. V. All rights reserved.

【 授权许可】

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