The need for control of magnetic parameters for energy efficient performance of magnetic tunnel junctions

Frontiers in Theoretical and Applied Physics/UAE 2017

Farhat, I.A.H.^1 ; Gale, E.^2 ; Alpha, C.^3 ; Isakovic, A.F.^1

Khalifa University of Science and Technology, Dept. of Physics, Abu Dhabi

127788, United Arab Emirates^1

University of Bristol, 12a Priory Road, Bristol

BS8 1TU, United Kingdom^2

Cornell University, Center for Nanofabrication, Ithaca

NY

14850, United States^3

关键词: Landau-Lifshitz-Gilbert;    Magnetic parameters;    Magnetic tunnel junction;    Material parameter;    Operating energies;    Optimizing energy;    Spin-transfer torque random access memory (STT-RAM);    Switching dynamics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/869/1/012028/pdf
DOI  :  10.1088/1742-6596/869/1/012028

来源: IOP

【 摘 要 】

Optimizing energy performance of Magnetic Tunnel Junctions (MTJs) is the key for embedding Spin Transfer Torque-Random Access Memory (STT-RAM) in low power circuits. Due to the complex interdependencies of the parameters and variables of the device operating energy, it is important to analyse parameters with most effective control of MTJ power. The impact of threshold current density, Jco, on the energy and the impact of HKon Jcoare studied analytically, following the expressions that stem from Landau-Lifshitz-Gilbert-Slonczewski (LLGS-STT) model. In addition, the impact of other magnetic material parameters, such as Ms, and geometric parameters such as tfreeand λ is discussed. Device modelling study was conducted to analyse the impact at the circuit level. Nano-magnetism simulation based on NMAGTMpackage was conducted to analyse the impact of controlling HKon the switching dynamics of the film.