Low-field microwave absorption in pulse laser deposited FeSi thin film

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:324

Article

Gavi, H.²  Ngom, B. D.^3,4  Beye, A. C.³  Strydom, A. M.⁵  Srinivasu, V. V.¹  Chaker, M.⁴  Manyala, N.² 

[1] Univ S Africa, Dept Phys, ZA-0003 Pretoria, South Africa

[2] Univ Pretoria, Inst Appl Mat, SARCHI Chair Carbon Technol & Mat, Dept Phys, ZA-0028 Pretoria, South Africa

[3] Univ Cheikh Anta Dakar, Fac Sci & Tech, Grp Lab Phys Solid & Mat, Dakar 16996, Senegal

[4] Ctr Energie Mat, Inst Natl Rech Sci, Varennes, PQ J3X 1S2, Canada

[5] Univ Johannesburg, Dept Phys, ZA-2006 Johannesburg, South Africa

关键词: Pulsed laser ablation;    Crystalline B20 FeSi film;    Low field microwave absorption;   

DOI  :  10.1016/j.jmmm.2011.11.003

来源: Elsevier

【 摘 要 】

Low field microwave absorption (LFMA) measurements at 9.4 GHz (X-band), were carried out on pulse laser deposited (PLD) polycrystalline B20 cubic structure FeSi thin film grown on Si (111) substrate. The LFMA properties of the films were investigated as a function of DC field, temperature, microwave power and the orientation of DC field with respect to the film surface. The LFMA signal is very strong when the DC field is parallel to the film surface and vanishes at higher angles. The LFMA signal strength increases as the microwave power is increased. The LFMA signal disappears around 340 K, which can be attributed to the disappearance of ferromagnetic state well above room temperature in these films. We believe that domain structure evolution in low fields, which in turn modifies the low field permeability as well as the anisotropy, could be the origin of the LFMA observed in these films. The observation of LFMA opens the possibility of the FeSi films to be used as low magnetic field sensors in the microwave and rf frequency regions. (C) 2011 Elsevier B.V. All rights reserved.

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