Voltage controlled magnetism in Cr2O3 based all-thin-film systems

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:486

Article

Wang, Jun-Lei¹  Echtenkamp, Will¹  Mahmood, Ather¹  Binek, Christian¹ 

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

关键词: Magnetoelectrics;    Voltage-controlled magnetism;    Exchange bias;    Boundary magnetization;    Spin Hall magnetoresistance;    Anomalous Hall effect;   

DOI  :  10.1016/j.jmmm.2019.165262

来源: Elsevier

【 摘 要 】

Voltage-control of exchange biases through active selection of distinct domain states of the magnetoelectric and antiferromagnetic pinning layer is demonstrated for Cr2O3/CoPd heterostructures. Progress and obstacles towards an isothermal switching of exchange bias are discussed. An alternative approach avoiding exchange bias for voltage-controlled memory exploits boundary magnetization at the surface of Cr2O3 as voltage-controlled state variable. We demonstrate readout and switching of boundary magnetization in ultra-thin Cr2O3/Pt Hall bar devices where reversal of boundary magnetization is achieved via magnetoelectric annealing with simultaneously applied +/- 0.5 V and 400 mT electric and magnetic fields.

【 授权许可】

Free