Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy

SURFACE SCIENCE

卷:659

Article

Mende, P. C.¹  Gao, Q.¹  Ismach, A.²  Chou, H.²  Widom, M.¹  Ruoff, R.²  Colombo, L.³  Feenstra, R. M.¹ 

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[3] Texas Instruments Inc, Adv Technol Dev, Dallas, TX 75243 USA

关键词: Hexagonal boron nitride;    Low-energy electron microscopy;    Low-energy electron reflectivity;    Interlayer states;   

DOI  :  10.1016/j.susc.2017.02.004

来源: Elsevier

【 摘 要 】

The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electron microscopy (LEEM). The reflectivity of the electrons, measured over an energy range of 0-20 eV, reveals distinct minima and maxima. The measured data is compared with simulations based on a first-principles description of the electronic structure of the material. From this comparison, the number of hBN layers and the separation between the lowest hBN layer and the nickel surface is deduced. The coupling of interlayer states of the hBN to both image potential and Shockley-type surface states of the nickel is discussed, and the dependence of the reflectivity spectra on the surface orientation of nickel grains is examined.

【 授权许可】

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