期刊论文详细信息
SURFACE SCIENCE 卷:651
Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface
Article
Richter, M. C.1,2  Mariot, J-M.3,4  Gafoor, M. A.1  Nicolai, L.1,5  Heckmann, O.1,2  Djukic, U.1  Ndiaye, W.1  Vobornik, I.6  Fujii, J.6  Barrett, N.2  Feyer, V.7,8,9  Schneider, C. M.7,8  Hricovini, K.1,2 
[1] Univ Cergy Pontoise, Lab Phys Mat & Surfaces, 5 Mail Gay Lussac, F-95031 Cergy Pontoise, France
[2] CEA Saclay, Serv Phys Etat Condense, IRAMIS, DSM, F-91191 Gif Sur Yvette, France
[3] Univ Paris 06, Sorbonne Univ, Lab Chim Phys Matiere & Rayonnement, UMR 7614, 11 Rue Pierre & Marie Curie, F-75231 Paris 05, France
[4] CNRS, Lab Chim Phys Matiere & Rayonnement, UMR 7614, 11 Rue Pierre & Marie Curie, F-75231 Paris 05, France
[5] Univ Munich, Dept Chem, Butenandtstr 5-13, D-81377 Munich, Germany
[6] CNR, TASC Lab, Ist Officina Mat, I-34014 Trieste, Italy
[7] Res Ctr Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
[8] Res Ctr Julich, JARA FIT, D-52425 Julich, Germany
[9] Sincrotrone Trieste SCpA, NanoESCA Beamline, I-34012 Trieste, Italy
关键词: Indium arsenide;    Bismuth;    Chemical reactivity;    Circular pattern morphology;    PEEM;    ARPES;   
DOI  :  10.1016/j.susc.2016.03.032
来源: Elsevier
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【 摘 要 】

Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra. (C) 2016 Elsevier B.V. All rights reserved.

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