Uranium passivation by C+ implantation:: A photoemission and secondary ion mass spectrometry study

SURFACE SCIENCE

卷:600

Article

Nelson, AJ ; Felter, TE ; Wu, KJ ; Evans, C ; Ferreira, JL ; Sickhaus, WJ ; McLean, W

关键词: X-ray photoelectron spectroscopy (XPS);    time-of-flight secondary ion mass spectrometry (ToF-SIMS);    uranium;    uranium carbide;    ion implantation;   

DOI  :  10.1016/j.susc.2006.01.025

来源: Elsevier

【 摘 要 】

Implantation of 33 keV C+ ions into polycrystalline U-238 with a dose of 4.3 x 10(17) cm(-2) produces a physically and chemically modified surface layer that prevents further air oxidation and corrosion. X-ray photoelectron spectroscopy and secondary ion mass spectrometry were used to investigate the surface chemistry and electronic structure of this C+ ion implanted polycrystalline uranium and a non-implanted region of the sample, both regions exposed to air for more than a year. In addition, scanning electron microscopy was used to examine and compare the surface morphology of the two regions. The U 417, 0 Is and C Is core-level and valence band spectra clearly indicate carbide formation in the modified surface layer. The time-of-flight secondary ion mass spectrometry depth profiling results reveal an oxy-carbide surface layer over an approximately 200 nm thick UC layer with little or no residual oxidation at the carbide layer/U metal transitional interface. (c) 2006 Elsevier B.V. All rights reserved.

【 授权许可】

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