Time-evolution of the GaAs(001) pre-roughening process

SURFACE SCIENCE

卷:540

Article

Ding, Z ; Bullock, DW ; Thibado, PM ; LaBella, VP ; Mullen, K

关键词: scanning tunneling microscopy;    surface roughening;    surface structure, morphology, roughness, and topography;    gallium arsenide;    surfaces defects;   

DOI  :  10.1016/S0039-6028(03)00916-6

来源: Elsevier

【 摘 要 】

The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported. (C) 2003 Elsevier B.V. All rights reserved.

【 授权许可】

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