STM observation of initial growth of Sn atoms on Ge(001) surface

SURFACE SCIENCE

卷:601

Article

Tomatsu, Kota ; Nakatsuji, Kan ; Iimori, Takushi ; Komori, Fumio

关键词: scanning tunneling microscopy;    growth;    self-assembly;    surface structure, morphology, roughness, and topography;    germanium;    tin;   

DOI  :  10.1016/j.susc.2007.01.049

来源: Elsevier

【 摘 要 】

We have studied initial growth of Sri atoms on Ge(001) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(001) substrate at room temperature, the Sri atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the (310) and the (110) directions, and epitaxial structures. For Sn deposition onto the substrate at 80 K, the population of the dimer chains aligning in the (310) direction increases. The diffusion barrier of the Sn adatom on the substrate kinetically determines the population of the dimer chain. We propose that the diffusion barrier height depends on surface strain induced by the adatom. The two kinds of dimer chains appearing on the Ge(001) and Si(001) surfaces with adatoms of the group-IV elements are systematically interpreted in terms of the surface strain. (c) 2007 Elsevier B.V. All rights reserved.

【 授权许可】

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