Photon-induced oxidation of graphene/Ir(111) by SO2 adsorption

SURFACE SCIENCE

卷:641

Article; Proceedings Paper

Boettcher, Stefan¹  Vita, Hendrik¹  Horn, Karsten¹ 

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

关键词: Graphene;    Graphene oxide;    Functionalization;    NEXAFS;    XPS;    ARPES;   

DOI  :  10.1016/j.susc.2015.02.003

来源: Elsevier

【 摘 要 】

We prepare a single layer of graphene oxide by adsorption and subsequent photo-dissociation of SO2 on graphene/Ir(111). Epoxidic oxygen is formed as the main result of this process on graphene, as judged from the appearance of characteristic spectroscopic features in the C 1s and 0 1s core level lines. The different stages of decomposition of SO2 into its photo-fragments are examined during the oxidation process. NEXAFS at the carbon K edge reveals a strong disturbance of the graphene backbone after oxidation and upon SO adsorption. The oxide phase is stable up to room temperature, and is fully reversible upon annealing at elevated temperatures. A band gap opening of 330 +/- 60 meV between the valence and conduction bands is observed in the graphene oxide phase. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

Free