Highly sensitive detection of H2O adsorbed on Si(111)7 x 7 and Si(100)2 x 1 surfaces by means of slow highly charged Xe ions

SURFACE SCIENCE

卷:707

Article

Takahashi, Satoshi¹  Tona, Masahide²  Nakamura, Nobuyuki¹  Yamada, Chikashi¹  Sakurai, Makoto³  Ohtani, Shunsuke¹ 

[1] Univ Electrocommun, Chofu, Tokyo 1828585, Japan

[2] Ayabo Corp, 1 Fukamacho Hosogute, Anjo, Aichi 4460052, Japan

[3] Kobe Univ, Dept Phys, Kobe, Hyogo 6578501, Japan

关键词: Highly charged ion;    Potential sputtering;    Proton sputtering;    Water;    Silicon;    Secondary-ion mass spectrometry;   

DOI  :  10.1016/j.susc.2020.121785

来源: Elsevier

【 摘 要 】

The proton yields from Si(111)7 x 7 and Si(100)2 x 1 reconstructed surfaces irradiated with slow (nu < 0.25 nu(Bohr)) highly charged Xe ions are obtained. H2O molecules adsorbed over time on the surfaces at room temperature, under ultra-high vacuum can be detected as an increase of the proton yield. For the Si(100)2 x 1 surface, the proton yield with HCI-irradiation time is discussed based on temporal variation of the H2O coverage. The proton desorption efficiency with Xe50+ is more than about ten times and twice as compared with Xe29+ and Xe44+, respectively. For the Si(111)7 x 7 and Si(100)2 x 1 surfaces, the proton yield in each time increases with the charge states q to the power of 6 and 4, respectively, and is changed with time with the power laws held on.

【 授权许可】

Free