Iridium-silicide nanowires on Si(110) surface

SURFACE SCIENCE

卷:641

Article

Mohottige, Rasika N.¹  Oncel, Nuri¹ 

[1] Univ N Dakota, Dept Phys & Astrophys, Grand Forks, ND 58202 USA

关键词: STM;    STS;    Silicon 110;    Nanowires;   

DOI  :  10.1016/j.susc.2015.07.016

来源: Elsevier

【 摘 要 】

We studied physical and electronic properties of iridium suicide nanowires grown on the Si(110) surface with the help of scanning tunneling microscopy and spectroscopy. The nanowires grow along the [001] direction with an average length of about 100 nm. They have a band gap of similar to 0.5 eV and their electronic properties show similarities with the iridium suicide ring clusters formed on Ir modified Si(111) surface. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

Free