Full field chemical imaging of buried native sub-oxide layers on doped silicon patterns

SURFACE SCIENCE

卷:604

Article

de la Pena, F.²  Barrett, N.¹  Zagonel, L. F.²  Walls, M.²  Renault, O.³ 

[1] LENSIS, CEA, IRAMIS, SPCSI, F-91191 Gif Sur Yvette, France

[2] Univ Paris 11, Phys Solides Lab, CNRS, UMR 8502, F-91405 Orsay, France

[3] MINATEC, CEA, LETI, F-38054 Grenoble 9, France

关键词: Semiconductor-insulator interfaces;    Semiconductor-semiconductor thin film structures;    Silicon oxides;    Photoelectron emission;    Synchrotron radiation photoelectron spectroscopy;    Photoelectron emission microscopy (XPEEM);   

DOI  :  10.1016/j.susc.2010.06.006

来源: Elsevier

【 摘 要 】

Fully energy-filtered X-ray photoelectron emission microscopy is used to analyze the spatial distribution of the silicon sub-oxide structure at the SiO2/Si interface as a function of underlying doping pattern. Using a spectroscopic pixel-by-pixel curve fitting analysis, we obtain the sub-oxide binding energy and intensity distributions over the full field of view. Binding energy maps for each oxidation state are obtained with a spatial resolution of 120 nm. Within the framework of a five-layer model, the experimental data are used to obtain quantitative maps of the sub-oxide layer thickness and also their spatial distribution over the p-n junctions. Variations in the sub-oxide thicknesses are found to be linked to the level and type of doping. The procedure, which takes into account instrumental artefacts, enables the quantitative analysis of the full 3D dataset. (C) 2010 Elsevier B.V. All rights reserved.

【 授权许可】

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