Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

SCRIPTA MATERIALIA

卷:142

Article

Kim, Jong Cheol^1,2  Lee, Jinhyung⁶  Kim, Jongsik⁵  Singh, Rajiv K.²  Jawali, Puneet²  Subhash, Ghatu⁴  Lee, Haigun¹  Arjunan, Arul Chakkaravarthi³ 

[1] Korea Univ, Dept Mat Sci & Engn, 145 Anam Dong, Seoul 02841, South Korea

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Sinmat Inc, 1912 NW 67th Pl, Gainesville, FL 32653 USA

[4] Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA

[5] Korea Inst Sci & Technol, Hwarang Ro 14 Gil, Seoul 02792, South Korea

[6] SK Hynix, 2091 Gyeongchung Daero, Icheon Si, Gyeonggi Do, South Korea

关键词: GaN on diamond;    Spark plasma sintering;    Direct bonding;    Heat dissipation;    Immiscibility between Ga and C;   

DOI  :  10.1016/j.scriptamat.2017.08.041

来源: Elsevier

【 摘 要 】

This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

Free