Non-dislocation-mediated basal stacking faults inside {10(1)over-bar1} twins

SCRIPTA MATERIALIA

卷:141

Article

Sun, Qi¹  Zhang, Qiwei²  Li, Bin²  Zhang, Xiyan¹  Tan, Li¹  Liu, Qing¹ 

[1] Chongqing Univ, Sch Mat Sci & Engn, Chongqing, Peoples R China

[2] Univ Nevada, Dept Chem & Mat Engn, Reno, NV 89557 USA

关键词: Stacking faults;    Hexagonal close-packed metals;    Twin;    Transmission electron microscopy;   

DOI  :  10.1016/j.scriptamat.2017.07.036

来源: Elsevier

【 摘 要 】

Anomalous basal stacking faults have frequently been observed inside {10 (1) over bar2} twins in deformed hcp metals. In this work, we report transmission electron microscopy observation of basal stacking faults inside {10 (1) over bar1} twins. These stacking faults present similar characteristics to those inside {10 (1) over bar2} twins. To reveal the formation mechanism, we performed atomistic simulations. The results show that the stacking faults are not mediated by partial dislocations. Lattice transformation analysis based on classical twinning theory shows that very large atomic shuffles (similar to 0.16 nm) perpendicular to the twinning shear are required for twinning and responsible for the formation of these stacking faults. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

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