Influence of Ni Solute segregation on the intrinsic growth stresses in Cu(Ni) thin films

SCRIPTA MATERIALIA

卷:113

Article

Kaub, T. M.¹  Felfer, P.^2,3  Cairney, J. M.²  Thompson, G. B.¹ 

[1] Univ Alabama, Dept Met & Mat Engn, Tuscaloosa, AL 35487 USA

[2] Univ Sydney, Australian Ctr Microscopy & Microanal, Camperdown, NSW 2006, Australia

[3] Univ Erlangen Nurnberg, Dept Mat Sci, D-91058 Erlangen, Germany

关键词: Thin films;    Grain boundaries;    Atom probe tomography;    Sputtering;    Residual stress;   

DOI  :  10.1016/j.scriptamat.2015.10.010

来源: Elsevier

【 摘 要 】

Using intrinsic solute segregation in alloys, the compressive stress in a series of Cu(Ni) thin films has been studied. The highest compressive stress was noted in the 5 at.%Ni alloy, with increasing Ni concentration resulting in a subsequent reduction of stress. Atom probe tomography quantified Ni's Gibbsian interfacial excess in the grain boundaries and confirmed that once grain boundary saturation is achieved, the compressive stress was reduced. This letter provides experimental support in elucidating how interfacial segregation of excess adatoms contributes to the post-coalescence compressive stress generation mechanism in thin films. (C) 2015 Elsevier Ltd. All rights reserved.

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