Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films

SCRIPTA MATERIALIA

卷:65

Article

Abedrabbo, S.^1,2  Lahlouh, B.²  Shet, S.³  Fiory, A. T.¹ 

[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07901 USA

[2] Univ Jordan, Dept Phys, Amman 11942, Jordan

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

关键词: Photoluminescence;    Thin films;    Semiconductor silicon;    Sol-gel materials;   

DOI  :  10.1016/j.scriptamat.2011.07.025

来源: Elsevier

【 摘 要 】

Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 mu m) and vacuum annealed; the strongest emission was obtained at similar to 700 degrees C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

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