Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:372

Article

Vittone, E.^1,2  Pastuovic, Z.³  Breese, M. B. H.⁴  Garcia-Lopez, J.⁵  Jaksic, M.⁶  Raisanen, J.⁷  Siegele, R.³  Simon, A.^8,9  Vizkelethy, G.¹⁰ 

[1] Univ Turin, NIS Res Ctr, Dept Phys, Via P Giuria 1, I-10125 Turin, Italy

[2] Univ Turin, CNISM, Via P Giuria 1, I-10125 Turin, Italy

[3] Ctr Accelerator Sci ANSTO, Locked Bag 2001, Kirrawee Dc, NSW 2234, Australia

[4] Natl Univ Singapore, Dept Phys, CIBA, Singapore 117542, Singapore

[5] Univ Seville, CNA, CSIC, Av Thomas A Edison 7, Seville 41092, Spain

[6] RBI, Dept Expt Phys, POB 180, Zagreb 10002, Croatia

[7] Univ Helsinki, Dept Phys, Helsinki 00014, Finland

[8] IAEA, Vienna Int Ctr, POB 100, A-1400 Vienna, Austria

[9] Hungarian Acad Sci ATOMKI, Inst Nucl Res, Debrecen, Hungary

[10] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

关键词: Charge collection efficiency;    Radiation damage;    Ion Beam Induced Charge (IBIC);    Semiconductors;    MeV ion beams;   

DOI  :  10.1016/j.nimb.2016.01.030

来源: Elsevier

【 摘 要 】

This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials. (C) 2016 Elsevier B.V. All rights reserved.

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