Effects of electronic and nuclear interactions in SiC

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:267

Article; Proceedings Paper

Audren, A.¹  Monnet, I.²  Gosset, D.³  Leconte, Y.¹  Portier, X.²  Thome, L.⁴  Garrido, F.⁴  Benyagoub, A.²  Levalois, M.²  Herlin-Boime, N.¹  Reynaud, C.¹ 

[1] CEA Saclay, CEA, DSM, IRAMIS,SPAM,Lab Francis Perrin, F-91191 Gif Sur Yvette, France

[2] CEA CNRS ENSICAEN, Ctr Rech Mat Ions & Photon CIMAP, F-14070 Caen 5, France

[3] CEA, DEN, DMN, SRMA,LA2M, F-91191 Gif Sur Yvette, France

[4] Univ Paris 11, CNRS, IN2P3, Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France

关键词: Irradiation;    SiC;    Nanostructure;    Single crystalline;    Grazing incidence X-ray diffraction;    Rutherford Backscattering Spectrometry;   

DOI  :  10.1016/j.nimb.2009.02.033

来源: Elsevier

【 摘 要 】

In this study, we performed irradiation experiments on nanostructured 3C-SiC samples, with 95 MeV Xe ions at room temperature. This energy permits the observation of the combined electronic and nuclear interactions with matter. The grazing incidence X-ray diffraction results do not reveal a complete amorphization, despite value of displacement per atom overcoming the total amorphization threshold. This may be attributed to competing effects between nuclear and electronic energy loss in this material since a total amorphization induced by nuclear interactions was found after low energy ion irradiation (4 MeV Au). Moreover, electronic interactions created by high energy ion irradiations induce no disorder in single crystalline 6H-SiC. But in samples previously disordered by low energy ion implantation (700 keV 1), the electronic interactions generate a strong defects recovery. (C) 2009 Elsevier B.V. All rights reserved.

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