Fine-tuning the etch depth profile via dynamic shielding of ion beam

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:381

Article

Wu, Lixiang¹  Qiu, Keqiang¹  Fu, Shaojun¹ 

[1] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China

关键词: Ion beam etching;    Shielding rate;    Etch depth;    Parametric modeling;   

DOI  :  10.1016/j.nimb.2016.05.021

来源: Elsevier

【 摘 要 】

We introduce a method for finely adjusting the etch depth profile by dynamic shielding in the course of ion beam etching (IBE), which is crucial for the ultra-precision fabrication of large optics. We study the physical process of dynamic shielding and propose a parametric modeling method to quantitatively analyze the shielding effect on etch depths, or rather the shielding rate, where a piecewise Gaussian model is adopted to fit the shielding rate profile. Two experiments were conducted. The experimental result of parametric modeling of shielding rate profiles shows that the shielding rate profile is significantly influenced by the rotary angle of the leaf. The result of the experiment on fine-tuning the etch depth profile shows good agreement with the simulated result, which preliminarily verifies the feasibility of our method. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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