Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:282

Article

Zhang, J.¹  Momota, S.¹  Toyonaga, T.¹  Terauchi, H.¹  Imanishi, F.¹  Taniguchi, J.² 

[1] Kochi Univ Technol, Dept Mech Syst Engn, Kami, Kochi 7828502, Japan

[2] Tokyo Univ Sci, Dept Appl Elect, Noda, Chiba 2788510, Japan

关键词: Swelling height;    Argon beam;    Carbon beam;    Silicon;    Simulation;    Annealing;   

DOI  :  10.1016/j.nimb.2011.08.027

来源: Elsevier

【 摘 要 】

The swelling phenomenon of Si crystal, irradiated by Ar+ and C+ beams, and its morphological change through the thermal annealing process have been studied. The height of swelling structures produced by the Ar+ beam is much higher than that produced by the C+ beam at energy 90 key with the fluence up to 8 x 10(16)/cm(2). The large different in the swelling height was well understood base on the productivity of vacancies evaluated by the SRIM simulation and experiment. Post-implantation samples irradiated with fluence 4 x 10(16)/cm(2), were annealed at various temperatures in the range of 200-800 degrees C. In the case of Ar+ irradiated samples, the swelling height started to increase at about 600 degrees C. In contrast, in the case of C+ beam irradiated samples, the swelling height started to decrease at about 600 degrees C and almost disappeared at 800 degrees C. The opposite behavior is understood based on the difference in irradiation-induced defect and in rearrangement mechanism in the thermal annealing process. (C) 2011 Elsevier B.V. All rights reserved.

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