Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS)

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:332

Article; Proceedings Paper

Primetzhofer, D.¹  Litta, E. Dentoni²  Hallen, A.²  Linnarsson, M. K.²  Possnert, G.¹ 

[1] Uppsala Univ, Dept Phys & Astron, SE-75120 Uppsala, Sweden

[2] KTH Royal Inst Technol, ICT, SE-16440 Kista, Sweden

关键词: MEIS;    Hafniumoxide;    Thin films;    Dielectric;    RBS;   

DOI  :  10.1016/j.nimb.2014.02.063

来源: Elsevier

【 摘 要 】

We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. As a model system high-k material stacks made from ultra-thin films of HfO2 grown on a p-type Si (100) substrate with a 0.5 nm SiO2 interface layer have been investigated. By comparison of experimental spectra and computer simulations TOF-MEIS was employed to establish a depth profile of the films and thus obtaining information on stoichiometry and film quality. Nominal film thicknesses were in the range from 1.8 to 12.2 nm. A comparison of the results with those from other MEIS approaches is made. Issues regarding different combinations of composition and stopping power as well as the influence of channeling are discussed. As a supporting method Rutherford-Backscattering spectrometry (RBS) was employed to obtain the areal density of Hf atoms in the films. (C) 2014 Elsevier B.V. All rights reserved.

【 授权许可】

Free